PART |
Description |
Maker |
IDT71P74104S167BQ IDT71P74104S200BQ IDT71P74104S25 |
1.8V 512K x 36 QDR II PipeLined SRAM 1.8V 2M x 9 QDR II PipeLined SRAM 1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 2M x 8 QDR II Pipelined SRAM 18Mb Pipelined QDR II SRAM Burst of 4
|
IDT http://
|
K7S1636U4C K7S1618U4C-EC330 |
512Kx36 & 1Mx18 QDR II b4 SRAM QDR SRAM, PBGA165 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
|
Samsung semiconductor Maxim Integrated Products, Inc.
|
CY7C1415BV18-250BZI CY7C1415BV18-167BZI |
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 1M X 36 QDR SRAM, 0.45 ns, PBGA165 36-Mbit QDR™-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
71P74604S167BQG8 P74804S200BQ8 |
512K X 36 QDR SRAM, 0.5 ns, PBGA165 13 X 15 MM, 1 MM PITCH, GREEN, FBGA-165 1M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
K7R161884B K7R161884B-FC16 K7R161884B-FC20 K7R1618 |
512Kx36 & 1Mx18 QDR II b4 SRAM 512Kx36 512Kx36 & 1Mx18 QDR II b4 SRAM 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
CY7C1310CV18-167BZXC CY7C1314CV18-167BZI CY7C1314C |
18-Mbit QDR-IISRAM 2-Word Burst Architecture 2M X 8 QDR SRAM, 0.5 ns, PBGA165 18-Mbit QDR-IISRAM 2-Word Burst Architecture 512K X 36 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CY7C1312BV18-167BZXC CY7C1310BV18-167BZXC CY7C1314 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 1M X 18 QDR SRAM, 0.5 ns, PBGA165 18-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
CY7C1511V18-250BZXC CY7C1511V18-250BZI CY7C1511V18 |
72-Mbit QDR II SRAM 4-Word Burst Architecture 8M X 9 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR II SRAM 4-Word Burst Architecture 4M X 18 QDR SRAM, 0.5 ns, PBGA165 72-Mbit QDR II SRAM 4-Word Burst Architecture 4M X 18 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR II SRAM 4-Word Burst Architecture 2M X 36 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR II SRAM 4-Word Burst Architecture 8M X 8 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1311CV18-278BZXI CY7C1315CV18-278BZXC CY7C1311 |
2M X 8 QDR SRAM, 0.45 ns, PBGA165 512K X 36 QDR SRAM, 0.45 ns, PBGA165
|
CYPRESS SEMICONDUCTOR CORP
|
CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR-II SRAM 4-Word Burst Architecture 36-Mbit QDR-II SRAM 2-Word Burst Architecture 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Flow-through SRAM with NoBL Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture SPI Serial EEPROM SPI串行EEPROM 36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM 256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc. Electronic Theatre Controls, Inc.
|
UPD44325084F5-E37-EQ2-A UPD44325084F5-E50-EQ2-A UP |
4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165 4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, PLASTIC, BGA-165
|
NEC, Corp.
|